xf r = an amp company rf mosfet power transistor, low, 28v 2 - 175 mhz DU2810S features l n-channel enhancement mode device l dmos structure l lower capacitances for broadband operation l common source configuration l low noise floor absolute maximum ratinas at 25c ( parameter 1 symbol 1 rating 1 units 1 1 drain-sourcevoltage ) v, 1 65 i v i gate-source voltage drain-source current power dissipation v os 20 v ?0s 2.8 a po 35? w ( junctiontemperature 1 t, ) 200 1 ?c 1 storagetemperature thermal resistance t st0 -65to+150 ?c e jc 2 ?cl-w specifications subject to change without notice. m/a-com, inc. 9-27 north america: tel. (800) 366-2266 n asia/pacific: tel. t81 (03) 3226-1671 h europe: tel. +44 (1344) 869 595 fax (800) 618-8883 fax +81 (03) 3226-1451 fax +44 (1344) 300 020
rf baosfet power transistor, iow, 28v typical device \mpedance frequency (mhz) *,, (ohms) 30 *,ond (ohms) 27.0 -j 11.0 50 23.0 - j 3.0 24.0 - j 15.0 100 19.0 - 5.0 j 18.0 -j 18.0 14.0 - 6.0 200 j 12.0 - j 19.0 ,i 9.0 -j 5.0 v&3 v, 1,,=100 ma, po,,=lo.o watts z,, is the series equivalent input impedance of the device from gate to source. 2 load is the series equivalent load impedance as measured from drain to ground. rf test fixture +?r;s +?m input c2 cl c3 c4 c5 c6 rl l2 ll l3 ql 20 pf, unelcu 500 pf, unelcci 1000 pf, unelco 5 uf electrolytic 12k ohm 4 turns of nil, 16 awg on jo? id 2 turns of nil. 16 awg on .35? id 5 turns of no. 16 awg un 035? id DU2810S 9-28 specifications subject to change without notice. north america: tel. (800) 366-2266 l asia/pacific: tel. +81 (03) 3226-1671 fax (800) 618-8883 fax +81 (03) 3226-1451 m/a-com, inc. # europe: tel. +44 (1344) 869 595 fax +44 (1344) 300 020
|
